9728太阳集团·(中国)有限公司

Reduced losses, increased power density and efficiency
SiC MOSFET can be used as a replacement for IGBT (Insulated Gate Bipolar Transistors) and MOSFET devices in on-board charger OBC. In addition, SiC MOSFET can be used in high-frequency resonant topology designs to reduce losses and increase power density and efficiency in filters. As a result, the use of silicon carbide power devices can make on-board charger OBCs more efficient, miniaturized, and reliable, which greatly improves the charging experience and cost of ownership of electric vehicles.
Application Advantages
1. Higher operating temperature: SiC power devices have higher heat resistance and can withstand higher operating temperatures. This is very important for on-board charger OBC because the charging process generates a certain amount of heat, and silicon carbide devices can better cope with high-temperature environments, improving system reliability and life.
2. Faster switching speed:  SiC power devices switch faster than traditional Si power devices, enabling higher switching frequencies. This means that the on-board charger OBC can control current and voltage more effectively, reduce power loss and electromagnetic interference, and improve system response speed and conversion efficiency.
3. Lower on-resistance: SiC power  devices have lower on-resistance, which reduces the power loss of the switching device. This is particularly important for on-board charger OBC, as it reduces heat loss and improves energy conversion efficiency, thereby reducing energy consumption and charging time.
4. Higher voltage capability: SiC power  devices can withstand higher voltages, providing greater design margins and stability, enabling the vehicle charger OBC to operate normally under different operating conditions, increasing system stability and safety.
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